Improved linewidth enhancement factor of 1.3-<i>µ</i>m InAs/GaAs quantum dot lasers by direct Si doping

Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers

Linewidth enhancement factor and chirp in quantum dot lasers

Frequency-dependent linewidth enhancement factor of optical injection-locked quantum dot/dash lasers.

Combining theoretical and experimental studies show that optical injection strongly changes the behavior of the linewidth enhancement factor (α(H)-factor) and the FM-to-AM indices ratio (FAIR) in quantum dash/dot semiconductor lasers. In contrast to solitary lasers, both the α(H)-factor and the FAIR at low-frequency modulation are reduced by optical injection. At high modulation frequency, howe...

Gain compression coefficient and above-threshold linewidth enhancement factor in InAs/GaAs quantum dot DFB lasers

We measure, for the first time, the gain compression coefficient and above-threshold linewidth enhancement factor (alpha parameter) in quantum dot (QD) distributed feedback lasers (DFB) by time-resolved-chirp (TRC) characterization. The alpha parameter is measured to be 2.6 at threshold and increases to 8 when the output power of the QD DFB is increased to 3 mW. The dependence of the above-thre...

Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3- m InAs–GaAs Quantum-Dot Lasers

Quantum-dot (QD) lasers exhibit many useful properties such as low threshold current, temperature and feedback insensitivity, chirpless behavior, and low linewidth enhancement factor ( H-factor). Although many breakthroughs have been demonstrated, the maximum modulation bandwidth remains limited in QD devices, and a strong damping of the modulation response is usually observed pointing out the ...